IMZ4T108

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

500mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA, 3V

Frequency - Transition :

250MHz, 200MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SC-74, SOT-457

Power - Max :

300mW

Product Status :

Active

Supplier Device Package :

SMT6

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

600mV @ 50mA, 500mA, 600mV @ 30mA, 300mA

Voltage - Collector Emitter Breakdown (Max) :

32V