US6T9TR

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 100mA, 2V

Frequency - Transition :

320MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

400mW

Product Status :

Not For New Designs

Supplier Device Package :

UMT6

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

350mV @ 25mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

30V