ZXTDB2M832TA

制造商 :

Diodes Incorporated

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

4.5A, 3.5A

Current - Collector Cutoff (Max) :

25nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2A, 2V / 150 @ 2A, 2V

Frequency - Transition :

140MHz, 180MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-VDFN Exposed Pad

Power - Max :

1.7W

Product Status :

Obsolete

Supplier Device Package :

8-MLP (3x2)

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

270mV @ 125mA, 4.5A, 300mV @ 350mA, 3.5A

Voltage - Collector Emitter Breakdown (Max) :

20V