LBN150B01-7

制造商 :

Diodes Incorporated

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

200mA

Current - Collector Cutoff (Max) :

50nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 100mA, 1V / 32 @ 100mA, 1V

Frequency - Transition :

250MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6

Power - Max :

300mW

Product Status :

Obsolete

Supplier Device Package :

SOT-26

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

360mV @ 20mA, 200mA, 500mV @ 20mA, 200mA

Voltage - Collector Emitter Breakdown (Max) :

40V