HBDM60V600W-7

制造商 :

Diodes Incorporated

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

500mA, 600mA

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA, 1V / 100 @ 150mA, 10V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

200mW

Product Status :

Obsolete

Supplier Device Package :

SOT-363

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

400mV @ 10mA, 100mA, 500mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

65V, 60V