NSTB1002DXV5T1G

制造商 :

onsemi

产品分类 :

晶体管 - 双极 (BJT) - 阵列，预偏置

Current - Collector (Ic) (Max) :

100mA, 200mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA, 10V / 100 @ 1mA, 10V

Frequency - Transition :

250MHz

Mounting Type :

Surface Mount

Package / Case :

SOT-553

Power - Max :

500mW

Product Status :

Active

Resistor - Base (R1) :

47kOhms

Resistor - Emitter Base (R2) :

47kOhms

Supplier Device Package :

SOT-553

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50V, 40V