PBLS2003S,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - 阵列，预偏置

Current - Collector (Ic) (Max) :

100mA, 3A

Current - Collector Cutoff (Max) :

1µA, 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA, 5V / 150 @ 2A, 2V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Power - Max :

1.5W

Product Status :

Obsolete

Resistor - Base (R1) :

10kOhms

Resistor - Emitter Base (R2) :

10kOhms

Supplier Device Package :

8-SO

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA / 355mV @ 300mA, 3A

Voltage - Collector Emitter Breakdown (Max) :

50V, 20V