BFU580GX

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

60mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 30mA, 8V

Frequency - Transition :

11GHz

Gain :

10.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.4dB @ 1.8GHz

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power - Max :

1W

Product Status :

Active

Supplier Device Package :

SC-73

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V