BFU768F,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

70mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

155 @ 10mA, 2V

Frequency - Transition :

110GHz

Gain :

13.1dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.1dB ~ 1.2dB @ 5GHz ~ 5.9GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-343F

Power - Max :

220mW

Product Status :

Obsolete

Supplier Device Package :

4-DFP

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

2.8V