BFG520W,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

70mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 20mA, 6V

Frequency - Transition :

9GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.1dB ~ 2.1dB @ 900MHz

Operating Temperature :

175°C (TJ)

Package / Case :

SOT-343 Reverse Pinning

Power - Max :

500mW

Product Status :

Obsolete

Supplier Device Package :

4-SO

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V