BFG410W,135

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

12mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA, 2V

Frequency - Transition :

22GHz

Gain :

21dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 2GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SC-82A, SOT-343

Power - Max :

54mW

Product Status :

Obsolete

Supplier Device Package :

CMPAK-4

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

4.5V