PBR951,215

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 5mA, 6V

Frequency - Transition :

8GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.3dB ~ 2dB @ 1GHz ~ 2GHz

Operating Temperature :

175°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

365mW

Product Status :

Obsolete

Supplier Device Package :

SOT-23 (TO-236AB)

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

10V