BFQ591,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

200mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 70mA, 8V

Frequency - Transition :

7GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

175°C (TJ)

Package / Case :

TO-243AA

Power - Max :

2.25W

Product Status :

Obsolete

Supplier Device Package :

SOT-89-3

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V