BFG21W,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA, 2V

Frequency - Transition :

18GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

150°C (TJ)

Package / Case :

SC-82A, SOT-343

Power - Max :

600mW

Product Status :

Obsolete

Supplier Device Package :

CMPAK-4

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

4.5V