MBC13900T1

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

20mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA, 2V

Frequency - Transition :

15GHz

Gain :

15dB ~ 22dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SC-82A, SOT-343

Power - Max :

188mW

Product Status :

Obsolete

Supplier Device Package :

SOT-343

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

6.5V