BFG135AE6327XT

制造商 :

Infineon Technologies

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

150mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 100mA, 8V

Frequency - Transition :

6GHz

Gain :

9dB ~ 14dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

Operating Temperature :

-

Package / Case :

TO-261-4, TO-261AA

Power - Max :

1W

Product Status :

Discontinued at Digi-Key

Supplier Device Package :

PG-SOT223-4

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V