BFG 19S E6327

制造商 :

Infineon Technologies

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

210mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA, 8V

Frequency - Transition :

5.5GHz

Gain :

14dB ~ 8.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

2dB ~ 3dB @ 900MHz ~ 1.8GHz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power - Max :

1W

Product Status :

Obsolete

Supplier Device Package :

PG-SOT223-4

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V