BFY193PZZZA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

80mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 30mA, 8V

Frequency - Transition :

7.5GHz

Gain :

12.5dB ~ 13.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

2.3dB ~ 2.9dB @ 2GHz

Operating Temperature :

200°C (TJ)

Package / Case :

MICRO-X1

Power - Max :

580mW

Product Status :

Obsolete

Supplier Device Package :

MICRO-X1

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V