EC3H02BA-TL-H

制造商 :

onsemi

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

70mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 20mA, 5V

Frequency - Transition :

7GHz

Gain :

8.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1dB @ 1GHz

Operating Temperature :

150°C (TJ)

Package / Case :

3-XFDFN

Power - Max :

100mW

Product Status :

Obsolete

Supplier Device Package :

ECSP1006-3

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

10V