EC4H09C-TL-H

制造商 :

onsemi

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

40mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA, 1V

Frequency - Transition :

26GHz

Gain :

15dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.3dB @ 2GHz

Operating Temperature :

150°C (TJ)

Package / Case :

4-UFDFN

Power - Max :

120mW

Product Status :

Obsolete

Supplier Device Package :

4-ECSP1008

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

3.5V