S200-50

制造商 :

Microsemi

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

30A

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 1A, 5V

Frequency - Transition :

1.5MHz ~ 30MHz

Gain :

12dB ~ 14.5dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

150°C (TJ)

Package / Case :

55HX

Power - Max :

320W

Product Status :

Obsolete

Supplier Device Package :

55HX

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

110V