BLT70,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

250mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 100mA, 4.8V

Frequency - Transition :

900MHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

175°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power - Max :

2.1W

Product Status :

Obsolete

Supplier Device Package :

SC-73

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

8V