PBSS5130T,215

制造商 :

Nexperia

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

260 @ 500mA, 2V

Frequency - Transition :

200MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

480 mW

Product Status :

Active

Supplier Device Package :

TO-236AB

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

225mV @ 50mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

30 V