NZT605

制造商 :

onsemi

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

1.5 A

Current - Collector Cutoff (Max) :

10nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 1A, 5V

Frequency - Transition :

150MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power - Max :

1 W

Product Status :

Active

Supplier Device Package :

SOT-223-4

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

110 V