2SC3649T-TD-E

制造商 :

onsemi

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

1.5 A

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA, 5V

Frequency - Transition :

120MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-243AA

Power - Max :

500 mW

Product Status :

Active

Supplier Device Package :

PCP

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

450mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

160 V