KSD2012GTU

制造商 :

onsemi

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

3 A

Current - Collector Cutoff (Max) :

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA, 5V

Frequency - Transition :

3MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Power - Max :

25 W

Product Status :

Active

Supplier Device Package :

TO-220F-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

60 V