NSVBCP69T1G

制造商 :

onsemi

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

85 @ 500mA, 1V

Frequency - Transition :

60MHz

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power - Max :

1.5 W

Product Status :

Active

Supplier Device Package :

SOT-223 (TO-261)

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

20 V