2SAR567F3TR

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

2.5 A

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA, 5V

Frequency - Transition :

220MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

3-UDFN Exposed Pad

Power - Max :

1 W

Product Status :

Active

Supplier Device Package :

HUML2020L3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

200mV @ 80mA, 800mA

Voltage - Collector Emitter Breakdown (Max) :

120 V