NTE2322

制造商 :

NTE Electronics, Inc.

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

600 mA

Current - Collector Cutoff (Max) :

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 10V

Frequency - Transition :

200MHz

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 125°C (TJ)

Power - Max :

650 mW

Product Status :

Active

Supplier Device Package :

14-DIP

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 30mA, 300mA

Voltage - Collector Emitter Breakdown (Max) :

40 V