NTE59

制造商 :

NTE Electronics, Inc.

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

17 A

Current - Collector Cutoff (Max) :

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8A, 4V

Frequency - Transition :

20MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

3-SIP

Power - Max :

200 W

Product Status :

Active

Supplier Device Package :

3-SIP

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 1A, 10A

Voltage - Collector Emitter Breakdown (Max) :

200 V