PBSS4230QAZ

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A, 2V

Frequency - Transition :

190MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

3-XDFN Exposed Pad

Power - Max :

325 mW

Product Status :

Active

Supplier Device Package :

DFN1010D-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

190mV @ 50mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

30 V