BF723,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

10nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA, 20V

Frequency - Transition :

60MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power - Max :

1.2 W

Product Status :

Active

Supplier Device Package :

SOT-223

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 30mA

Voltage - Collector Emitter Breakdown (Max) :

250 V