BDP954H6327XTSA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

3 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

85 @ 500mA, 1V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power - Max :

5 W

Product Status :

Active

Supplier Device Package :

PG-SOT223-4

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

100 V