MJD112-1G

制造商 :

onsemi

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

20µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A, 3V

Frequency - Transition :

25MHz

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power - Max :

1.75 W

Product Status :

Active

Supplier Device Package :

I-PAK

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Voltage - Collector Emitter Breakdown (Max) :

100 V