PBSS5130QAZ

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100mA, 2V

Frequency - Transition :

170MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

3-XDFN Exposed Pad

Power - Max :

325 mW

Product Status :

Obsolete

Supplier Device Package :

DFN1010D-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

240mV @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

30 V