BUJD203AD,118

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

4 A

Current - Collector Cutoff (Max) :

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

11 @ 2A, 5V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power - Max :

80 W

Product Status :

Active

Supplier Device Package :

DPAK

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1V @ 600mA, 3A

Voltage - Collector Emitter Breakdown (Max) :

425 V