PBRN123ES,126

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - 单，预偏置

Current - Collector (Ic) (Max) :

800 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

280 @ 300mA, 5V

Frequency - Transition :

-

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

700 mW

Product Status :

Obsolete

Resistor - Base (R1) :

2.2 kOhms

Resistor - Emitter Base (R2) :

2.2 kOhms

Supplier Device Package :

TO-92-3

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

1.15V @ 8mA, 800mA

Voltage - Collector Emitter Breakdown (Max) :

40 V