SI7980DP-T1-GE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

8A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Standard

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1010pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® SO-8 Dual

Power - Max :

19.8W, 21.9W

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

22mOhm @ 5A, 10V

Supplier Device Package :

PowerPAK® SO-8 Dual

Vgs(th) (Max) @ Id :

2.5V @ 250µA