FDMB3800N

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

4.8A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

465pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Power - Max :

750mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

40mOhm @ 4.8A, 10V

Supplier Device Package :

8-MLP, MicroFET (3x1.9)

Vgs(th) (Max) @ Id :

3V @ 250µA