HP8M51TB1

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

4.5A (Ta)

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V, 26.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 50V, 1430pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerTDFN

Power - Max :

3W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V

Supplier Device Package :

8-HSOP

Vgs(th) (Max) @ Id :

2.5V @ 1mA