NTMD4N03R2G

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

4A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

2W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

60mOhm @ 4A, 10V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

3V @ 250µA