FDMQ86530L

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

8A

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

FET Type :

4 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2295pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

12-WDFN Exposed Pad

Power - Max :

1.9W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

17.5mOhm @ 8A, 10V

Supplier Device Package :

12-MLP (5x4.5)

Vgs(th) (Max) @ Id :

3V @ 250µA