SI6968BEDQ-T1-GE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

5.2A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual) Common Drain

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

1W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

22mOhm @ 6.5A, 4.5V

Supplier Device Package :

8-TSSOP

Vgs(th) (Max) @ Id :

1.6V @ 250µA