NTMC083NP10M5L

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc)

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V, 8.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

222pF @ 50V, 525pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

1.6W (Ta), 3.1W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

-