SH8MA4TB1

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

9A (Ta), 8.5A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 10V, 19.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 15V, 890pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Power - Max :

2W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

21.4mOhm @ 9A, 10V, 29.6mOhm @ 8.5A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.5V @ 1mA