BSO615CGXUMA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

3.1A (Ta), 2A (Ta)

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

22.5nC @ 10V, 20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V, 460pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

2W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V

Supplier Device Package :

PG-DSO-8

Vgs(th) (Max) @ Id :

2V @ 20µA, 2V @ 450µA