SH8MB5TB1

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

8.5A (Ta)

Drain to Source Voltage (Vdss) :

40V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

10.6nC @ 20V, 51nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 20V, 2870pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Power - Max :

2W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

19.4mOhm @ 8.5A, 10V, 16.8mOhm @ 8.5A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.5V @ 1mA