HP8MA2TB1

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

18A (Ta), 15A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V, 25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 15V, 1250pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerTDFN

Power - Max :

3W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V

Supplier Device Package :

8-HSOP

Vgs(th) (Max) @ Id :

2.5V @ 1mA