SI6913DQ-T1-E3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

4.9A

Drain to Source Voltage (Vdss) :

12V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

830mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

21mOhm @ 5.8A, 4.5V

Supplier Device Package :

8-TSSOP

Vgs(th) (Max) @ Id :

900mV @ 400µA