US6J11TR

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

1.3A

Drain to Source Voltage (Vdss) :

12V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 6V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-SMD, Flat Leads

Power - Max :

320mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

260mOhm @ 1.3A, 4.5V

Supplier Device Package :

TUMT6

Vgs(th) (Max) @ Id :

1V @ 1mA